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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1663 DESCRIPTION *High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector- Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w 1500 V 1500 V 700 V 7.7 V 5 A 3 A 80 W .cn mi e IC Collector Current-Continuous IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1663 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 50mH 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V IEBO Emitter Cutoff Current VEB= 7.7V; IC= 0 VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 1A; VCE= 5V 100 50 1.0 50 A A mA ICBO Collector Cutoff Current hFE DC Current Gain Switching times ton Turn-On Time tstg Storage Time tf Fall Time w w scs .i w .cn mi e 18 1.0 s IC= 2.5A, IB1= 0.5A, IB2= -1A 3.0 s 0.5 s hFE Classifications Q 18-34 P 18-50 isc Websitewww.iscsemi.cn 2 |
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